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EPJB Colloquium – From SiC to fluorescent SiC based white LEDs

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Three free standing 3C-SiC substrates with size 10x10 mm (Fig. 16).

A new EPJ B Colloquium reviews the latest advances in silicon carbide (SiC) for optoelectronics. The wide bandgap of SiC makes it a great semiconductor material to make devices for in high power, high frequency and high temperature applications.

During the past decade, SiC has also become a promising materials for light-emitting diodes (LED), since it was found that co-doping it with nitrogen and boron produces a high donor-acceptor pair emission efficiency. Fluorescent SiC based white LED light source is an innovative concept for optoelectronic devices.

In order to accomplish it, the development of growth and nanofabrication techniques is crucial. This Colloquium covers available and new growth methods for poly-crystalline fluorescent SiC source material, single crystalline epitaxial growth and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.

Advances in wide bandgap SiC for optoelectronics. Haiyan Ou, Yiyu Ou, Aikaterini Argyraki, Saskia Schimmel, Michl Kaiser, Peter Wellmann, Margareta K. Linnarsson, Valdas Jokubavicius, Jianwu Sun, Rickard Liljedahl, and Mikael Syväjärvi (2014) Eur.Phys. J. B, DOI: 10.1140/epjb/e2014-41100-0

Editors-in-Chief
L. Baudis, G. Dissertori, K. Skenderis and D. Zeppenfeld
We are grateful to the Editor, to the Referee for careful reading of the manuscript, for the interesting and useful remarks, which allow us to improve the text and clarify some of the results.

Evgenij Martynov (Bogolyubov Institute for Theoretical Physics, Kiev, Ukraine) and Basarab Nicolescu (Babes-Bolyai University, Cluj-Napoca, Romania)

ISSN: 1434-6044 (Print Edition)
ISSN: 1434-6052 (Electronic Edition)

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