https://doi.org/10.1140/epjc/s10052-018-5985-8
Regular Article - Experimental Physics
Study of inelastic nuclear interactions of 400 GeV/c protons in bent silicon crystals for beam steering purposes
1
CERN, European Organization for Nuclear Research, 1211, Geneva 23, Switzerland
2
Laboratoire de l’Accélérateur Linéaire (LAL), Université Paris Sud Orsay, Orsay, France
3
Dipartimento di Fisica e Scienze della Terra, INFN Sezione di Ferrara, Universita di Ferrara, Via Sarogat 1 Blocco C, 44121, Ferrara, Italy
4
INFN, Laboratori Nazionali di Frascati, Via Fermi, 40, 00044, Frascati, Rome, Italy
5
INFN Sezione di Roma, Piazzale Aldo Moro 2, 00185, Rome, Italy
6
Dipartimento di Fisica, Sapienza Univ. Roma, Piazzale A.Moro, 2, 00185, Rome, Italy
7
INFN Sezione di Napoli, Complesso Universitario di Monte Sant’Angelo, Via Cintia, 80126, Naples, Italy
8
NRC Kurchatov Institute-IHEP, 142281, Protvino, Russia
9
Joint Institute for Nuclear Research, Joliot-Curie 6, 141980, Dubna, Russia
10
Petersburg Nuclear Physics Institute in National Research Centre “Kurchatov Institute”, 188300, Gatchina, Russia
11
Imperial College, London, UK
12
Taras Shevchenko National University of Kyiv (TSNUK), Kiev, Ukraine
* e-mail: marco.garattini@cern.ch
Received:
14
February
2018
Accepted:
11
June
2018
Published online:
18
June
2018
Inelastic nuclear interaction probability of 400 GeV/c protons interacting with bent silicon crystals was investigated, in particular for both types of crystals installed at the CERN Large Hadron Collider for beam collimation purposes. In comparison to amorphous scattering interaction, in planar channeling this probability is 
for the quasi-mosaic type (planes (111)), and 
for the strip type (planes (110)). Moreover, the absolute inelastic nuclear interaction probability in the axial channeling orientation, along the 
axis, was estimated for the first time, finding a value of 
for a crystal 2 mm long along the beam direction, with a bending angle of 55 
rad. This value is more than two times lower with respect to the planar channeling orientation of the same crystal, and increases with the vertical angular misalignment. Finally, the correlation between the inelastic nuclear interaction probability in the planar channeling and the silicon crystal curvature is reported.
© The Author(s), 2018
